The aim of the project is to develop the technologies for next generation production line equipment for thin silicon wafers (<160 µm), with breakage rates equal to or lower than today?s figures for 180 µm wafers.
The sub-goals of NEXTGEN-SI are:
- To est ablish investigation techniques for and fundamental knowledge on the abrasive process in the DCW sawing of crystalline silicon (cr-Si)
- To establish links between parameters in the abrasive process and the (surface) quality of wafers
- To establish a DCW process for cr-Si wafers
- To establish fracture mechanisms and mechanical strength data in wafers using a combination of experimental and modelling techniques.
- to develop FEM models for the assessment of mechanical loads and impacts introduced in cri tical process steps
- To track steps where defects are generated and develop a numerical model to study them
- To educate one PhD student on the topic: development of an advanced FEM model of mc Si-wafers deformation