Quantum technology (QT) promises massive impacts on fields ranging from communication and cryptography to sensing and computing. While current quantum computers use superconducting processors that require mK operation temperatures, extreme stability and are challenging to scale, point defects combine the potential for room-temperature qubit operation with nanoscale sensing and single-photon emitter (SPE) capabilities. SPEs are central to point defect based quantum technology, a field that is rapidly evolving – particularly after the discovery of quantum compatible point defect emitters in the industrially friendly platform of silicon carbide (SiC), and now more recently in silicon (Si). Nevertheless, to successfully employ point defects as a quantum technology platform, significant advances must be made related to, e.g., defect formation and identification, charge-state control, spin manipulation, emission tuning and integration with optoelectronic and nanophotonic devices. These are core topics that will be explored in the QuTe project.
Quantum technology (QT) promises massive impacts on fields ranging from communication and cryptography to sensing and computing. Point defects in semiconductors are among the promising platforms to deploy quantum technology and are the subject of an immense international research interest, offering a wafer platform suitable for scaling, miniaturization and room temperature operation. Essential to many point defect based QT components is the single photon emitter, and a deeper understanding of how an ideal SPS functions and interacts with its environment will have a profound impact. The QuTe project explores several underdeveloped topics of point defects in silicon and silicon carbide for QT applications, and involves identification of new SPEs, charge state identification and control, and manipulation and tuning of the emission wavelength, as well as theoretical modeling.
The overarching research questions in the QuTe project are: i) What are the origins of the single photon emission signatures observed in Si and SiC, and in what charge state do they act as SPE? ii) how can SPEs be manipulated to tune the emission wavelength, e.g. to obtain indistinguishable photons ? iii) can we employ quantum chemical calculations to reveal more information about the absorption and emission from SPEs, including time dependent information? To address these questions, we will employ electro-optical defect characterization, ion implantation, nano-structuring of semiconductor materials and advanced theoretical modeling to develop the understanding and controlled manipulations of the SPEs. In particular, the defect identifications will be a foundational task for the project. With this we hope to accelerate the process of utilizing point defects in semiconductors as building blocks for quantum technology, and we believe that QuTe will greatly enhance the visibility for QT in Norway, which is strategically important and well synchronized with the dawn of the global quantum era.