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IKTPLUSS-IKT og digital innovasjon

All2GaN

Alternative title: All2GaN

Awarded: NOK 4.3 mill.

The description of the task for the Participate in All2GaN project is to create a demonstrator based on the components of this project The demonstrator is a power supply used in a data center with performance summarized below; 3kw/48Vdc with 230vac input with very high efficiency, density and low price. Efficiency 97.5%, target 98% Power density 40W/inch3 or more as a function of maximum ambient temperature of 55°C. Selling price of 8-10 cents/W. Challenge; GaN transistor thermal and overcurrent protection for reliability. Imagined solution. By simplifying the circuit and design using GaN transistor with driver cost, performance and reliability can be achieved. Innovation. Gan transistor with driver simplifies the design and increases robustness and reliability. The 3kW rectifier will use the GaN transistor with integrated driver in the PFC. The integrated driver with built-in protection function for reduced costs and increased reliability, which is extremely important to Delta and our customers. 3kW/48Vdc rectifier. As a demonstrator for the Gan transistor with integrated driver, Delta will focus on the 3kW/48Vdc rectifier. This rectifier features a totem pole PFC, LLC with variable frequency and duty cycle from 120kHz to 320kHz and two full bridge rectifier outputs in parallel. Delta has developed two specifications of 100VGaN transistor with driver and 650VGaN transistor with driver which are shared in the project. For PFC and LLC Delta designed a discrete plug in PCB board with 42mO Infineon Gan transistor with external driver and galvanic driver. The main board of the 3kW rectifier has two plug-in PCB boards for PFC and LLC. The synchronous rectifiers, 8 pcs., are on the control board, which is also of the plug-in type. All KPIs such as efficiency, cost and power density are under control.

Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-tomarket and maximum product availability at the end user O7: Demonstrate highest affordable performance for greener power electronics and RF applications O8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/ business cases and European leadership beyond ALL2GaN. The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologiesfor various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases.

Funding scheme:

IKTPLUSS-IKT og digital innovasjon