Towards scalable quantum technologies

Shaping Tomorrow’s Quantum Technology: Harnessing Ultra-Bright Single-Photon Emitters Quantum technology harnesses the most exotic properties of quantum mechanics to develop new technological solutions, with the potential to revolutionize communication, cryptography, and sensing. Many current quantum platforms rely on materials that function only at extremely low temperatures, making them difficult to scale. Scientists are now turning their attention to point defects in semiconductors, known as quantum defects, which can operate at room temperature. These defects can serve as single-photon sources, crucial for various quantum applications, including our project, where we explore their potential for future technologies. Our project, "Towards Scalable Quantum Technologies" (TASQ), aims to capitalize on the unique potential of tiny defects in semiconductors to advance quantum technological progress. But what does this really mean? Normally, imperfections in materials are something to be avoided. However, in quantum technology, these faults become valuable, particularly the semiconductor defects that act as single-photon emitters (SPEs). SPEs are crucial for the development of future quantum communication systems and can be invaluable for quantum sensor technology. Our focus is on ultra-bright SPEs that can be created at the interface between silicon carbide (SiC) and silicon dioxide (SiO2) using nothing more than thermal processes. This method is both energy-efficient and compatible with existing industrial techniques. We are eager to understand the formation and behavior of these defects within their environments, to eventually bridge the gap between current semiconductor expertise and future quantum functionalities. Through this endeavor, we strive to not only deepen the fundamental understanding of these fascinating quantum phenomena but to also pave the way for new, scalable quantum technologies that could revolutionize the field.

The field of quantum technology (QT) aims to exploit the most exotic consequences of quantum mechanics for real-world applications. However, it has proven challenging to strike the balance between control of the quantum state, robustness to noise and, importantly, scalable material and processing. Thus, there is an ongoing race to discover and characterize new quantum platforms that satisfy these fundamental criteria. One of the most promising platforms for QT is point defects in semiconductors; imperfections in the material that one otherwise strives to avoid. Point defect-based QT facilitates quantum bits, based on either electron spin or photon polarization, that are well suited for optical readout using the single-photon emitter (SPE) property. In TASQ, we target a unique and intriguing defect system: ultra-bright SPEs that can be fabricated solely by thermal means in an industrially friendly platform, namely defects at the interface between silicon carbide and silicon dioxide. The goal of TASQ is to functionalize ultra-bright quantum emitters towards future applications in quantum sensing and secure photonic communication. To realize such devices, we need to uncover fundamental knowledge on the role of interface properties and how these may be accurately controlled. The optimal model system for such an investigation is deemed to be SPEs at the SiO2-SiC interface. TASQ will be pursued by a team of talented scientists with competency in advanced defect characterization, material synthesis, and modeling techniques. Our ambition is to accelerate the use of semiconductor point defects as building blocks for quantum devices; we bridge the gap between today’s semiconductor expertise and quantum functionalities to enable future technologies. We aim to (i) identify the origin of single-photon emitting defects at the SiO2-SiC interface, and (ii) develop means to control, understand and utilize the unique interactions between interface emitters and their environment.