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TEKNO-Naturvitenskap, grunnleggende teknologi

Electrical characterization of defects and quantum structures in silicon carbide (SiC) and gallium nitride (GaN)

Tildelt: kr 1,3 mill.

The request for increasingly smaller structures with adaptive ("smart") performance characteristics in micro- and nano-system technology implies totally new challenges for synthesis and characterization of semiconductor structures with nanoscopic dimensio ns. This proposal deals with two of the most promising wide-band-gap semiconductors for the development of new micro/nanotechnology, namely SiC and GaN. Some main applications of these materials are high temperature electronics like sensors in harsh environments, optoelectronic devices for communication, high-power and high-frequency devices for efficient (low power loss) and inexpensive connection of ren ewable and partly intermittent DC energy sources to the existing AC-electrical network. The aim of this project is to study the electrical properties of SiC- and GaN-structures and correlate the results with those from optical and structural techniques. A special focus will be on the understanding of how the electrical and optical properies can be tuned by either defect complexes involving lanthanide atoms or quantum structures (wells and dots) of different SiC-polytypes. Excellent facilities are available at UoO for electrical characterization of the synthesized SiC- and GaN-structures. Further, a close collaboration with several leading groups in the field is foreseen and close links exist with research partners in Europ e (Germany,Sweden, France), USA and Australia.

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TEKNO-Naturvitenskap, grunnleggende teknologi

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