Mg2NiH4 is a very attractive material for its potential in many practical applications such as energy storage, switchable mirrors, smart solar collectors, semiconductor electronics, and photovoltaics. For metal hydride films, the presence of a capping lay er, e.g. Pd, which facilitates the diffusion of hydrogen into/from the film is crucial for energy storage applications, switchable mirrors and smart solar collectors. For applications in semiconductor electronics, the formation of an oxide layer is prefer red as release/uptake of H will cause instability in electrical properties of the hydride.
The aim of this project is to systematically studying the influence of different types of capping layers and substrates on hydrogenation/dehydrogenation processes in Mg2NiH4 films at different temperatures. More specifically, the aims is to: i) find the best performing capping layer for a the above mentioned application fields; ii) provide information about the effect of temperature treatments to stability of the f ilms; iii) find out how the metal hydride films behave when they are connected to different substrates such as glass, metal, transparent conducting oxide and how can it be used to make practical electrical junctions and device-like structures.
The expect ed outcomes will be very valuable in the future development of Mg2NiH4 as a material for hydrogen storage, smart window, or semiconductor device applications. The Physics Department and the Department for Solar Energy at the Institute of Energy Technology have strong expertise on the above topics and have the necessary setups to do the planned work. The applicants and the visitor have previously collaborated on metal hydride films. This visit is expected to lift the cooperation between to a higher level. The expected outcome is important for both groups at IFE, strengthening IFE's competence and knowledge in the field of metal hydrides, as well as for the visitor home institute.