IKTPLUSS-IKT og digital innovasjon

Videreføring av stipendiater fra prosjekt 210716 Mikrobølgeradio med nettverksfunksjonalitet og teknologi for Mobilt Internett infrastruktur

Kilde:

Prosjektleder:

Prosjektnummer:

237214

Søknadstype:

Prosjektperiode:

2014 - 2016

Midlene er mottatt fra:

Organisasjon:

Geografi:

Fagområder:

Publikasjoner hentet fra Cristin

Bandwidth Reduction for Supply Modulated RF PAs Using Power Envelope Tracking

Novel metric describing total nonlinearity of Power amplifier with a corresponding figure of merit for linearity evaluation and optimization

Ingen publikasjoner funnet

Auxiliary Power Tracking Technique for Linearity Improvement of a 10 W GaN HEMT PA with and without Power Gate Tracking

Investigation of the Practical Output Load Impedance Sensitivity of a 10 W GaN Device Subjected to Gate Bias Variation

Investigation of Linearity Improvement with Dynamic Gate Bias Technique for Flat Gain or Phase of an 10 W GaN HEMT Power Amplifier

Measured Linearity Improvement of 10 W GaN HEMT PA with Dynamic Gate Biasing Technique for Flat Transfer Phase

Investigation of the Gate Bias Voltage Influence on Linearity Performance of the ET and AET 10 W GaN HEMT PAs

Comprehensive Investigation of a Dynamic Gate Biasing Technique for Linearity Improvement Based on Measurement of a 10 W GaN HEMT Power Amplifier

Ingen publikasjoner funnet

Budsjettformål:

IKTPLUSS-IKT og digital innovasjon

Finansieringskilder

IKTPLUSS-IKT og digital innovasjon

Videreføring av stipendiater fra prosjekt 210716 Mikrobølgeradio med nettverksfunksjonalitet og teknologi for Mobilt Internett infrastruktur

Publikasjoner hentet fra Cristin

Bandwidth Reduction for Supply Modulated RF PAs Using Power Envelope Tracking

Novel metric describing total nonlinearity of Power amplifier with a corresponding figure of merit for linearity evaluation and optimization

Auxiliary Power Tracking Technique for Linearity Improvement of a 10 W GaN HEMT PA with and without Power Gate Tracking

Investigation of the Practical Output Load Impedance Sensitivity of a 10 W GaN Device Subjected to Gate Bias Variation

Investigation of Linearity Improvement with Dynamic Gate Bias Technique for Flat Gain or Phase of an 10 W GaN HEMT Power Amplifier

Measured Linearity Improvement of 10 W GaN HEMT PA with Dynamic Gate Biasing Technique for Flat Transfer Phase

Investigation of the Gate Bias Voltage Influence on Linearity Performance of the ET and AET 10 W GaN HEMT PAs

Comprehensive Investigation of a Dynamic Gate Biasing Technique for Linearity Improvement Based on Measurement of a 10 W GaN HEMT Power Amplifier

Budsjettformål:

IKTPLUSS-IKT og digital innovasjon

Finansieringskilder

Temaer og emner