Self-assembled quantum dot crystals: Physics and Application

The goals of our project are (i) to develop a new intelligent nanostructured material containing ordered 2D and 3D arrays of Ge quantum dots embedded into Si matrix; (ii) to demonstrate its unique fundamental properties and their potential application to novel high performance Si devices. We will use advanced fabrication technologies to ensure realistic manufacturability of proposed "artificial crystal" with quantum dots. We will design and fabricate test devices using state of the art methods of semicond uctor device processing; the electro-optical properties of these devices will be properly characterized and compared with the results of theoretical studies. This will allow us to address several fundamental problems of modern condensed matter physics, su ch as interplay between effects of disorder, quantum overlap of the wave functions of adjacent quantum dots, and Coulomb interaction. The acquired knowledge will improve understanding of quantum transport in naqnosystems.

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