Novel silicon carbide dosimeter in radiation therapy and radiation protection for improved healthcare

SINTEF MiNaLab and UiO, within the framework of Norfab have the unique expertise to fabricate Silicon Carbide (SiC) radiation sensors using a combination of a Micro-Electro-Mechanical-System (MEMS) and Very-Large-Scale Integration (VLSI) Technology. An international collaboration consisting of experts in medical physics and nuclear science will bring this technology to application in the areas of R&D, and industries related to Medical Physics, Nuclear Medicine, and Radiation Protection. Our partners are the Centre of Medical Radiation Physics (CMRP) at University of Wollongong in Australia, the European Synchrotron Radiation Facility (ESRF) in France, the Institute of Experimental Applied Physics (IEAP) in the Czech Republic and Oslo University Hospital (OUS). Basic research on SiC radiation sensors will significantly enhance the status of semiconductor dosimetry, bringing today's technology to the forefront by offering high radiation tolerance, capability to operate at high temperature, and improved accuracy in radiobiological effectiveness measurement in human tissues. The outcomes will lead to a better characterisation and understanding of emerging therapeutics including heavy particle therapy and synchrotron radiotherapy, thus generating improved Treatment Planning Systems (TPSs) and Quality Assurance (QA). Radiation protection will also benefit by improving safety in occupational and accidental hazards from both artificial and natural radioactive sources. The project will hence contribute to providing better survival and quality-of-life in both cancer patients and the general population. In this project, we have fabricated the first pad didoes for laboratory testing using radiation sources and high precision beamline. The devices were demonstrated to have excellent response towards ionising particles. Devices with more sophisticated designs such as strip detectors and dosimeters have also been fabricated. Their performances and process optimisation are currently under investigation. During this investigation, several papers on the process and material physics of SiC have been published. We have also presented some irradiation results of our first samples at several international conferences. In the final year of this project, the performance on radiation detection for strip detectors and dosimeters will be studied.

SINTEF MiNaLab and UiO within the framework of Norfab have the capability and unique expertise to fabricate Silicon Carbide SiC radiation sensors using a combination of Micro-Electro-Mechanical-System (MEMS) and Very-Large-Scale Integration (VLSI) Technology. The key Norwegian partners will collaborate with a team of international experts in medical physics and nuclear science, from the Centre of Medical Radiation Physics (CMRP) at University of Wollongong, the European Synchrotron Radiation Facility (ESRF), the Institute of Experimental Applied Physics (IEAP) in Prague and Oslo University Hospital (OUS). The project will carry out basic research on a radiation sensor that will be fabricated using a novel material, silicon carbide (SiC), that can significantly enhance the current status of semiconductor dosimetry, bringing today's technology to the forefront by offering high radiation tolerance, capability to operate at high temperature, and improved accuracy in radiobiological effectiveness measurement in human tissues. The outcomes will imply better characterisation and understanding of emerging therapeutic heavy particle therapy and synchrotron radiotherapy, thus generating improved Treatment Planning System (TPS) and Quality Assurance (QA). Radiation protection will also benefit by improving safety in occupational and accidental hazards from both artificial and natural radioactive sources. The project will hence contribute in providing better survival and quality-of-life in cancer patients and in the general population. A knowledge platform of SiC sensors will be generated through experimental characterisation, theoretical modelling and material investigations. Furthermore, the fabrication of SiC sensors is still at its infancy stage. The project results on micro-technology including state-of-the-art micromachining will pave avenues for the novel fabrication of SiC, a promising material in the electronic industry.